 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| APTGT50TL601G Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 50A @ Tc = 80C Application * Solar converter * Uninterruptible Power Supplies Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Very low stray inductance * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant All multiple inputs and outputs must be shorted together 5/6 ; 9/10 Q1 to Q4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Max ratings 600 80 50 100 20 176 100A @ 550V Unit V APTGT50TL601G- Rev0 March, 2009 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGT50TL601G All ratings @ Tj = 25C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 50A Tj = 150C VGE = VCE , IC = 600A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit A V V nA 5.0 Q1 to Q4 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc RthJC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Junction to Case Thermal Resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=50A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 50A RG = 8.2 Tj = 25C VGE = 15V Tj = 150C VBus = 300V IC = 50A Tj = 25C RG = 8.2 Tj = 150C VGE 15V ; VBus = 360V tp 6s ; Tj = 150C Min Typ 3150 200 95 0.5 110 45 200 40 120 50 250 60 0.3 0.43 1.35 1.75 250 0.85 Max Unit pF C ns ns mJ mJ A C/W www.microsemi.com 2-7 APTGT50TL601G- Rev0 March, 2009 APTGT50TL601G CR1 to CR4 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 30A VR = 300V IF = 30A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 150 350 30 1.6 1.5 100 150 1.5 3.1 0.34 0.75 2.45 2 Unit V A A V ns C mJ C/W di/dt =1800A/s CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Err RthJC Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 150 350 Unit V A A Maximum Reverse Leakage Current DC Forward current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance VR=600V IF = 50A VGE = 0V 50 1.6 1.5 100 150 2.6 5.4 0.60 1.20 2 V ns C mJ 1.42 C/W di/dt =1800A/s IF = 50A VR = 300V Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz www.microsemi.com 3-7 APTGT50TL601G- Rev0 March, 2009 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 2500 -40 -40 -40 2.5 Typ Max 175 125 100 4.7 80 Unit V C N.m g APTGT50TL601G SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80 VCE=300V D=50% R G=8.2 T J=1 50C T c =85C 60 40 Hard switching 20 0 IC (A) www.microsemi.com 4-7 APTGT50TL601G- Rev0 March, 2009 0 20 40 60 80 APTGT50TL601G Output Characteristics (VGE=15V) Output Characteristics 100 TJ = 150C VGE=19V 100 TJ=25C 80 IC (A) TJ=125C 80 IC (A) TJ=150C VGE=13V 60 40 20 0 0 0.5 1 TJ=25C 60 VGE=15V 40 20 0 VGE=9V 1.5 VCE (V) 2 2.5 3 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 100 80 60 40 20 0 5 Transfert Characteristics 3.5 TJ=25C Energy losses vs Collector Current 3 2.5 E (mJ) VCE = 300V VGE = 15V RG = 8.2 TJ = 150C Eoff IC (A) 2 1.5 1 TJ=150C TJ=25C 0.5 0 11 12 0 20 40 IC (A) 60 80 Eon 6 7 8 9 10 100 VGE (V) Switching Energy Losses vs Gate Resistance 3 2.5 2 E (mJ) 1.5 1 Eon Eoff Reverse Bias Safe Operating Area 125 100 IC (A) 75 50 25 0 VGE=15V TJ=150C RG=8.2 0.5 0 5 15 VCE = 300V VGE =15V IC = 50A TJ = 150C 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.05 0 0.00001 Rectangular Pulse Duration in Seconds www.microsemi.com 5-7 APTGT50TL601G- Rev0 March, 2009 APTGT50TL601G CR1 to CR4 Typical performance curve Forward Characteristic of diode 60 50 40 IF (A) 30 20 10 TJ=25C TJ=150C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance 1 VCE = 300V VGE =15V IC = 30A TJ = 150C Energy losses vs Collector Current 1 0.75 E (mJ) 0.5 0.25 0 VCE = 300V VGE = 15V RG = 10 TJ = 150C 0.75 E (mJ) 0.5 0.25 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 0 10 20 30 IF (A) 40 50 60 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 3 Thermal Impedance (C/W) 2.5 2 1.5 1 0.5 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APTGT50TL601G- Rev0 March, 2009 0.05 0 0.00001 Rectangular Pulse Duration in Seconds www.microsemi.com 6-7 APTGT50TL601G CR5 & CR6 Typical performance curve Forward Characteristic of diode 100 80 60 40 TJ=150C IF (A) 20 TJ=25C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance 1.2 1 E (mJ) E (mJ) 0.8 0.6 0.4 0.2 0 5 15 25 35 45 55 65 Gate Resistance (ohms) VCE = 300V VGE =15V IC = 50A TJ = 150C Energy losses vs Collector Current 1.5 1 0.5 VCE = 300V VGE = 15V RG = 8.2 TJ = 150C 0 0 20 40 IF (A) 60 80 100 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APTGT50TL601G- Rev0 March, 2009 0.05 0 0.00001 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 |
Price & Availability of APTGT50TL601G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |